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Wuxi Qianye Micro-Nano Technology?Co., LTD.

19 years of research and development of semiconductor power devices

Specializing in power semiconductor device research and development for nearly 20 years, with an industry experienced R & D team, the company has been committed to the development and application of semiconductor power devices since its establishment, the products are widely used in various consumer markets. Cooperate with world class fabs to lay a solid foundation for high quality products. In 2018, the superjunction FET made breakthrough progress and reached the advanced level of the industry, becoming one of the leading semiconductor power device manufacturers in China. The company has advanced layout in the field of IGBT and silicon carbide, and has applied for many authorized patents. In 2020, its own packaging form TDHD came out, removing the packaging inductance, packaging internal resistance, packaging thermal resistance switch speed greatly improved, MOS itself heating greatly reduced, heat dissipation greatly increased. In 2021, a 100,000-level dust-free workshop will be established to achieve mass production of TDHD and WLCSP packaging.

The company is headquartered in Wuxi City, Jiangsu Province, and has branches and offices in Hong Kong, Huizhou, Shenzhen and Shanghai. Committed to building the company into a domestic first-class, the world's advanced semiconductor power device factory.

COMPANY CULTURE

Be market oriented

Take technology as the root

Humanized management

Grasp the pulse of The Times

Be the market leader

In the existing technical field of continuous improvement, breakthrough innovation, to create competitive products

It aims to provide a platform for employees to play their own advantages

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2021

2005?year

In cooperation with TSMC, the medium and low voltage MOS was successfully mass-produced at TSMC by the end of the year